?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com fgh40n60ufd rev. c0 fgh40n60ufd 600 v, 40 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current @ t c = 25 o c 120 a p d maximum power dissipation @ t c = 25 o c290 w maximum power dissipation @ t c = 100 o c116 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ? jc (diode) thermal resistance, junction to case - 1.45 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w g e c e c g collector (flange) fgh40n60ufd 600 v, 40 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.8 v @ i c = 40 a ? high input impedance ? fast switching ?rohs compliant applications ? solar inverter, ups, welder, pfc, microwave oven, tele- com, ess general description using novel field stop igbt technology, fairchild ? ?s field stop igbts offer the optimum performance for solar inverter, ups, welder, microwave oven, telecom, ess and pfc applications where low conduction and switching losses are essential.
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com fgh40n60ufd rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgh40n60ufd FGH40N60UFDTU to-247 tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.82.4v i c = 40a , v ge = 15v, t c = 125 o c -2.0- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -2110- pf c oes output capacitance - 200 - pf c res reverse transfer capacitance - 60 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -24- ns t r rise time - 44 - ns t d(off) turn-off delay time - 112 - ns t f fall time - 30 60 ns e on turn-on switching loss - 1.19 - mj e off turn-off switching loss - 0.46 - mj e ts total switching loss - 1.65 - mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -24- ns t r rise time - 45 - ns t d(off) turn-off delay time - 120 - ns t f fall time - 40 - ns e on turn-on switching loss - 1.2 - mj e off turn-off switching loss - 0.69 - mj e ts total switching loss - 1.89 - mj q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 120 - nc q ge gate to emitter charge - 14 - nc q gc gate to collector charge - 58 - nc
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com fgh40n60ufd rev. c0 electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c - 1.95 2.6 v t c = 125 o c - 1.85 - t rr diode reverse recovery time i f =20a, di es /dt = 200a/ ? s t c = 25 o c- 45 - ns t c = 125 o c - 140 - q rr diode reverse recovery charge t c = 25 o c- 75 - nc t c = 125 o c - 375 -
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com fgh40n60ufd rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.0 1.5 3.0 4.5 6.0 0 20 40 60 80 100 120 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.53.04.56.0 0 20 40 60 80 100 120 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 56789101112 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com fgh40n60ufd rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figur e 12. turn-on characteristics vs. gate r esistance 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 5000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c rss c oss c iss capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 200 1 10 100 1000 0.01 0.1 1 10 100 1ms 10 ms dc single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 400
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com fgh40n60ufd rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. gate resistance collector current figure 17. switching loss vs. collector current figure 18. turn off switching soa char acteristics 0 1020304050 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 5500 20 40 60 80 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 500 20 40 60 80 10 100 600 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 1 10 0.3 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 200 20 40 60 80 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com fgh40n60ufd rev. c0 typical performance characteristics figure 19. forward characteristics figure 20. typical reverse current vs. reverse voltage figure 21. stored charge figure 22. reverse recovery time figure 23.transient thermal impedance of igbt 01234 0.2 1 10 80 t j = 75 o c t j = 25 o c t c = 25 o c t c = 75 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 50 200 400 600 0.01 0.1 1 10 100 200 reverse current , i r [ ? a ] reverse voltage, v r [v] t j = 125 o c t j = 25 o c t j = 75 o c 510203040 20 40 60 80 100 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 510 20 30 40 30 40 50 60 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.2 0.5 0.1 0.05 0.01 0.02 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com fgh40n60ufd rev. c0 mechanical dimensions to-247a03
fgh40n60ufd 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 9 www.fairchildsemi.com fgh40n60ufd rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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